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Infineon Technologies BSZ058N03MS G
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BSZ058N03MS G
Manufacturers: Infineon Technologies
Qty: 279
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Description: MOSFET OptiMOS 3 M-SERIES
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:14 A
Rds On - Drain-Source Resistance:5 mOhms
Configuration:Single Quad Drain Triple Source
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:2.1 W
Mounting Style:SMD/SMT
Package / Case:TSDSON-8
Packaging:Reel
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